150mm(6인치) 웨이퍼는 1981년 처음으로 도입되었습니다. 오늘날 200mm 및 300mm 제품이 출시된 이후로 그 사용량은 점차 감소되어 왔으나 여전히 많은 업체에서 150mm 웨이퍼를 사용하고 있습니다. SVM은 다양한 150mm웨이퍼를 충분히 보유하고 있습니다. 아래 규격 리스트에 관련된 사항 또는 다른 종류의 150mm 웨이퍼를 찾으실 경우 언제든지 당사로 직접문의해 주시기 바랍니다.

Diameter: 150 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 650-700 μm
TTV: <=10 μm
Bow/Warp: <=40 μm
STIR: <=1 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 150 +/- 0.2 mm
Type/Dopant: N/Phosphorus
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 650-700 μm
TTV: <=5 μm
Bow/Warp: <=40 μm
STIR: <=1 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 150 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Thickness: 660-690 μm
TTV: <=3 μm
Bow/Warp: <=40 μm
STIR: <=0.2 μm
Front Surface: Polished
Particle Count: <=20@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 150 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Oxygen Content: 27-33 ppma
Oxygen Stacking Faults (OSF): <=100/cm2
Carbon Content: <=1.0 ppma
Metals: <5xE10
Thickness: 660-690 μm
TTV: <=10 μm
Bow/Warp: <=40 μm
STIR: <=4 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Flat: One SEMI Standard
Edges: Rounded and polished per SEMI Standard