200mm(8인치) 웨이퍼는 1985년 처음으로 도입되어 오늘날 업계의 표준 제품으로 사용되고 있으며 현재 그 사용량 및 생산량이 가장 많은 사이즈입니다. 이 제품은 휴대폰이나 평면 TV등 생활가전으로부터 테스트기, 계측기 등 산업용 장비에 이르기까지 다양한 용도로 사용되고 있으며 SVM은 다양한 규격의 200mm 제품을 항상 충분히 확보하고 있습니다. 아래 규격 리스트에 관련된 사항 또는 다른 종류의 200mm 웨이퍼를 찾으실 경우 언제든지 당사로 직접문의해 주시기 바랍니다.

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 10-30 Ω-cm
Metals: <5xE9
Thickness: 700-750 μm
TTV: <=3 μm
GTIR: <=5 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=1 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 10-20 Ω-cm
Metals: <5xE10
Thickness: 710-740 μm
TTV: <=6 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Metals: <5xE10
Thickness: 700-750 μm
TTV: <=4 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=0.2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-50 Ω-cm
Thickness: 700-750 μm
TTV: <=10 μm
Bow/Warp: <=50 μm
Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Metals: <5xE9
Thickness: 700-750 μm
TTV: <=5 μm
GTIR: <= 5 μm
Bow/Warp: <=40 μm
Site Flatness (STIR): <=1 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Etched
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard

Diameter: 200 +/- 0.2 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Grade: Epi
Resistivity: Customer Specified
Thickness: 700-750 μm
Epi Layer Thickness: Customer Specified
TTV: <=10 μm
Bow/Warp: <=40 μm
Front Surface: Polished
Back Surface: Etched or Oxide Back Seal
Notch: SEMI Standard
Edges: Rounded and polished per SEMI Standard