300mm(12인치) 웨이퍼는 1995년 처음으로 도입되었으며 지난 몇 년 사이 전 세계적으로 그 사용량이 급격히 증가하고 있는 제품입니다. 최근 모든 주요 반도체 업체들은 300mm용 Fab을 완공하였거나 건설할 계획을 가지고 있으며 장비 업체들 또한 많은 12인치 웨이퍼용 장비를 생산하고 있습니다. 모든 300mm 웨이퍼는 양면 연마 가공된 제품이며 200mm 웨이퍼처럼 Notch를 가지고 있습니다. SVM은 다양한 규격의 300mm 웨이퍼를 충분히 보유하고 있으며 언제든지 고객 분들의 다양한 요청 사항을 만족시킬 수 있도록 노력하고 있습니다. 아래 리스트에 나와있는 규격을 보시고 문의 사항이 있으실 경우 언제든지 당사로 문의해 주시기 바랍니다.

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Radial Resistivity Gradient (RRG): <=10%
Oxygen Concentration: <=30 ppma
Carbon Concentration: <= 1 ppma
Surface Metals: <=1xE10
Thickness: 750-800 μm
TTV: <=2 μm
GBIR: <=5 μm
STIR: <0.25 μm
Bow/Warp: <= 40 μm
Front Surface: Polished
Particle Count: <=50@>=0.09 μm
Back Surface: Polished

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Radial Resistivity Gradient (RRG): <=10%
Oxygen Concentration: <=30 ppma
Carbon Concentration: <= 1 ppma
Surface Metals: <=1xE10
Thickness: 750-800 μm
TTV: <=2 μm
GBIR: <=5 μm
STIR: <0.25 μm
Bow/Warp: <= 40 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-30 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Site Flatness (STIR): <= 0.13 μm
Bow/Warp: <=40 μm Front Surface: Polished
Particle Count: <=30@>=0.2 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 750-800 μm
Front Surface: Polished
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 1-100 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=100@>=0.2 μm
Back Surface: Polished
Notch: SEMI Standard

P+

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.12 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Thickness: 750-800 μm
TTV: <=2 μm
Front Surface: Polished
Particle Count: <=50@>=0.16 μm
Back Surface: Polished
Notch: SEMI Standard

Diameter: 300 +/- 0.5 mm
Type/Dopant: P/Boron
Orientation: {100} +/- 1
Growth Method: Cz
Resistivity: 0.005-0.02 Ω-cm
Thickness: 750-800 μm
Front Surface: Polished
Particle Count: <=200@>=0.2 μm
Back Surface: Polished
Notch: SEMI Standard